For gate oxides and high-k dielectric materials, one of the precursors needs to be an oxidizer. Ozone has many advantages over other oxidizers as a precursor for ALD and as a strong oxidizing agent. Ozone has a high redox potential, can be generated at the point-of-use, and it decays naturally into oxygen (2O3 ⇒ 3O2). Therefore, it is considered a "green" chemical. If required, ozone can also be destroyed at the output of the process chamber using a catalytic or thermal destruct unit. This significantly lowers chemical disposal cost, as the output is oxygen and contains no ozone. Ozone is very stable at room temperature, making it a good choice for most applications. In addition to ALD, typical ozone applications include chemical vapor deposition (CVD), photoresist strip, wafer cleaning, contaminant removal, surface conditioning, and oxide growth.

The AX8585 system is configurable with up to four (4) independent channels to support multiple tools or chambers concurrently. Each channel can be matched to the specific concentration and flow required for a specific process. The ozone source for each channel is the newly released AX8410 PRIME ozone generator. It incorporates MKS patented, high flow, high concentration, ultra clean ozone generation technology. The AX8585 includes all subassemblies required for stand-alone operation, including power distribution, an ambient ozone safety monitor, and status indicator panel.